Diagnosis of Nitrogen Plasma Generated by High Voltage Pulsed Corona Discharge via Molecular Beam Mass Spectroscopy 高压脉冲电晕放电氮等离子体的分子束质谱诊断研究
I will discuss how Molecular Beam Epitaxy ( MBE) was invented, its current status, and future developments. 我将介绍分子束磊晶技术(MBE)的发明经过、现况、和将来的发展。
Magnetic and electrical properties of Fe_3O_4 thin films on MgO ( 100) substrates by laser molecular beam epitaxy Fe3O4/MgO(100)薄膜的激光分子束外延与磁电学性能
Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In_ ( 0.2) Ga_ ( 0.8) As 衬底温度和生长速率对In(0.2)Ga(0.8)As分子束外延薄膜生长影响
The fuelling efficiency and injection depth are the fundamental problems of supersonic molecular beam fuelling. 超声分子束注入深度与加料效率是分子束加料研究中的基本课题。
Mid-infrared photoluminescence of PbSe/ PbSrSe multiple quantum wells grown by molecular beam epitaxy MBE生长PbSe/PbSrSe量子阱结构的光致中红外发光的研究
Study of Structure and Optical Characteristics of GaAs/ GaN Grown by Molecular Beam Epitaxy MBE生长GaAs/GaN薄膜结构与光学特性研究
Optimization analysis of tokamak plasma fuelling with supersonic molecular beam 托卡马克等离子体超声分子束加料的优化研究
Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film 分子束外延Gd2O3、Nd2O3高介电纳米薄膜的结构研究
Molecular Beam Epitaxy System and the Growth of GaAs Single Crystal Films 分子束外延设备和砷化镓单晶的生长
The fluorine atom reaction with trans-1,3-bu ta diene has been investigated by using the crossed molecular beam method. 利用改进型通用交叉分子束装置和脉冲直流放电产生脉冲氟原子束实验方法,研究了氟原子和1,3丁二烯分子的反应散射。
Al/ GaAs ( 100) schottky barrier contact has been grown by molecular beam epitaxy ( MBE). 利用分子束外延(MBE)设备生长了AI/GaAs(100)肖特基结。
The hetero epitaxial growth of GaSb on GaAs substrates by molecular beam epitaxy ( MBE) was investigated. 研究了用分子束外延(MBE)在GaAs衬底上生长GaSb薄膜的工艺。
A method to measure the diameter of molecular beam with a glass system has been investigated. It has been used to measure the diameters of the molecular beams of H_2, N_2 and Ar. 提出了一种检测分子束束斑直径的方法,研制了一套用以测量分子束斑直径的全玻璃分子束系统,并对H2、N2、Ar等气体的分子束进行了测量;
GaAs/ InGaAs quantum dots grown by molecular beam epitaxy ( MBE) were studied. 运用透射电子显微术(TEM)对由分子束外延(MBE)制备的GaAsInGaAs多层量子点样品进行观察和分析。
A glass molecular beam apparatus which is designed& manufactured in our laboratory is described. Besides, molecular beam intensities of different gases in this apparatus are measured. 文中叙述了我们实验室设计和制作的一种全玻璃结构的分子束装置,并在此装置上对不同气体的分子束强度进行了测试。
This theoretical model is important to understand or perform in the experiment of the molecular beam. 此理论模型对理解和进行分子束实验是非常重要的。
Finally, the concept for effective diameter of molecular beam is presented. 最后提出了以束强在束斑截面上的分布来定义束斑直径(称为有效直径)的概念,并给出了作法和结果。
A dynamical growth model of MBE ( Molecular Beam Epitaxy) is discussed. 讨论了分子束外延的动力学生长模型。并以高能电子衍射的表面鉴定方法,为这一模型提供了证据。
Main works and results include: ( 1). Growth method of self-organized quantum dots was studied. High quality InAs self-organized quantum dots were grown by MBE ( molecular beam epitaxy) technique. 本文开展的主要工作和结果有:(1)研究了自组织量子点的生长方法,利用分子束外延技术(MBE)生长出高质量的InAs自组织量子点。
The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described. 本文报道了金属有机源分子束外延设备的设计方案和技术特点。
To some extent the diagnosis can provide certain basic information for improving the molecular beam epitaxy technology. 在一定程度上为分子束外延工艺的改进提供了依据。
Study on the energy transfer of electronically excited atoms and molecules by molecular beam and laser 利用分子束和激光技术研究电子激发态原子、分子的态-态传能(II)&亚稳态原子传能和激发态分子内能量传递
The results of the molecular beam injection show that the impurity have been decreased, the electron density have been increases, and the plasma confinement property was improved. 分子束注入减小了杂质辐射,有效地提高了电子密度,改善了等离子体的约束性能。
The basic concepts, growth dynamics and applications for semiconductor materials and devices of this technique are presented by comparision with both techniques of molecular beam epitaxy ( MBE) and metallorganic chemical vapor deposition ( MOCVD). 通过与分子束外延(MBE)和金属有机化学汽相沉积(MOCVD)技术的比较,说明了这一新技术的基本概念、生长动力学以及在半导体材料和激光器件方面的应用。
Reaction Dynamics via Molecular Beam and Laser 分子束和激光束反应动态学
Perovskite oxide thin films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale. 用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物薄膜和异质结。
Firstly, the theory and fabrication of molecular beam epitaxy ( MBE) are described in detail. 本文首先详细介绍了分子束外延设备的原理和构造。